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IRF840I PDF预览

IRF840I

更新时间: 2024-01-04 18:54:54
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 151K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRF840I 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.57
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:500 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:125 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON

IRF840I 数据手册

 浏览型号IRF840I的Datasheet PDF文件第2页浏览型号IRF840I的Datasheet PDF文件第3页浏览型号IRF840I的Datasheet PDF文件第4页浏览型号IRF840I的Datasheet PDF文件第5页 
IRF840I  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Ease of Paralleling  
BVDSS  
RDS(ON)  
ID  
500V  
0.85Ω  
8A  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
G
Description  
APEC MOSFET provide the power designer with the best combination  
of fast switching , lower on-resistance and reasonable  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for commercial-  
industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
500  
Gate-Source Voltage  
±20  
V
ID@TC=25  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
8
A
ID@TC=100℃  
5.1  
A
IDM  
32  
35  
A
PD@TC=25℃  
Total Power Dissipation  
Single Pulse Avalanche Energy2  
W
mJ  
A
EAS  
IAR  
320  
Avalanche Current  
8
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
3.6  
65  
Rthj-a  
Data & specifications subject to change without notice  
201024071-1/4  

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