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STP7N52K3 PDF预览

STP7N52K3

更新时间: 2024-02-08 14:58:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 380K
描述
N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STP7N52K3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.29Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:525 V
最大漏极电流 (Abs) (ID):6.2 A最大漏极电流 (ID):6.3 A
最大漏源导通电阻:0.98 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):25 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP7N52K3 数据手册

 浏览型号STP7N52K3的Datasheet PDF文件第2页浏览型号STP7N52K3的Datasheet PDF文件第3页浏览型号STP7N52K3的Datasheet PDF文件第4页浏览型号STP7N52K3的Datasheet PDF文件第5页浏览型号STP7N52K3的Datasheet PDF文件第6页浏览型号STP7N52K3的Datasheet PDF文件第7页 
STB7N52K3 - STD7N52K3  
STF7N52K3 - STP7N52K3  
N-channel 525 V, 0.84 , 6.3 A, D2PAK, DPAK, TO-220FP, TO-220  
SuperMESH3™ Power MOSFET  
Preliminary Data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
3
3
1
1
STB7N52K3  
STD7N52K3  
STF7N52K3  
STP7N52K3  
525 V < 0.98 6.3 A  
525 V < 0.98 6.3 A  
525 V < 0.98 6.3 A(1) 25 W  
90 W  
90 W  
DPAK  
D²PAK  
525 V < 0.98 6.3 A 90 W  
1. Limited by package  
3
3
2
1
100% avalanche tested  
2
TO-2201  
TO-220FP  
Extremely high dv/dt capability  
Gate charge minimized  
Very low intrinsic capacitances  
Figure 1.  
Internal schematic diagram  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Application  
Switching applications  
Description  
The new SuperMESH3™ series is obtained  
through the combination of a further fine tuning of  
ST's well established strip-based PowerMESH™  
layout with a new optimization of the vertical  
structure. In addition to reducing on-resistance  
significantly versus previous generation, special  
attention has been taken to ensure a very good  
dv/dt capability and higher margin in breakdown  
voltage for the most demanding application.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB7N52K3  
STD7N52K3  
STF7N52K3  
STP7N52K3  
7N52K3  
7N52K3  
7N52K3  
7N52K3  
Tape and reel  
Tape and reel  
Tube  
DPAK  
TO-220FP  
TO-220  
Tube  
July 2008  
Rev 1  
1/15  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
15  

STP7N52K3 替代型号

型号 品牌 替代类型 描述 数据表
STF7N52K3 STMICROELECTRONICS

类似代替

N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK,
IRF840PBF VISHAY

功能相似

Power MOSFET
IRF840APBF VISHAY

功能相似

Power MOSFET

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