STP7NE10

更新时间： 2024-02-07 18:15:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	52K
描述
N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOSFET

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STP7NE10 数据手册

STP7NE10

N - CHANNEL 100V - 0.3 Ω - 7A - TO-220

STripFET POWER MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STP7NE10

100 V

< 0.4 Ω

7 A

■

TYPICAL R_DS(on)= 0.3 Ω

EXCEPTIONAL dv/dt CAPABILITY

AVALANCHE RUGGED TECHNOLOGY

100 % AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique " Single Feature

Size " strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalanche charac-

teristics and less critical alignment steps therefore

a remarkable manufacturing reproducibility.

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL (DISK DRIVES,etc.)

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

100

± 20

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

4.9

_DM(•)

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.3

W/^oC

V/ns

^oC

dv/dt(¹) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

(1) I_SD≤7 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/5

October 1999

12 3 4 5

中文翻译

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