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STP7N80K5 PDF预览

STP7N80K5

更新时间: 2023-12-20 18:44:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 812K
描述
N沟道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET,TO-220封装

STP7N80K5 数据手册

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STD7N80K5  
Datasheet  
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFET  
in a DPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
3
2
STD7N80K5  
800 V  
1.2 Ω  
6 A  
1
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
DPAK  
D(2, TAB)  
100% avalanche tested  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
Description  
AM01476v1_tab  
This very high voltage N-channel Power MOSFET is designed using MDmesh K5  
technology based on an innovative proprietary vertical structure. The result is a  
dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
Product status link  
STD7N80K5  
Product summary  
Order code  
STD7N80K5  
Marking  
Package  
Packing  
7N80K5  
DPAK  
Tape and reel  
DS9173 - Rev 8 - September 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

STP7N80K5 替代型号

型号 品牌 替代类型 描述 数据表
STD7N80K5 STMICROELECTRONICS

完全替代

N沟道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET,DP
STU7N80K5 STMICROELECTRONICS

功能相似

N沟道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET,IP

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