5秒后页面跳转
STP7NB40FP PDF预览

STP7NB40FP

更新时间: 2024-02-07 15:43:36
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
4页 76K
描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP7NB40FP 数据手册

 浏览型号STP7NB40FP的Datasheet PDF文件第2页浏览型号STP7NB40FP的Datasheet PDF文件第3页浏览型号STP7NB40FP的Datasheet PDF文件第4页 
STP7NB40  
STP7NB40FP  
N - CHANNEL ENHANCEMENT MODE  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP7NB40  
STP7NB40FP  
400 V  
400 V  
< 0.9 Ω  
< 0.9 Ω  
7.0 A  
4.4 A  
TYPICAL RDS(on) = 0.75 Ω  
EXTREMELY HIGH dV/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
DESCRIPTION  
1
1
Using the latest high voltage MESH OVERLAY  
process, SGS-Thomson has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP7NB40FP  
Unit  
STP7NB40  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
400  
400  
± 30  
V
V
V
o
Drain Current (continuous) at Tc = 25 C  
7
4.4  
2.8  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
4.4  
28  
A
I
DM()  
Drain Current (pulsed)  
28  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
0.8  
4.5  
35  
W
Derating Factor  
0.28  
4.5  
W/oC  
V/ns  
V
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 7A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
1/4  
January 1998  

STP7NB40FP 替代型号

型号 品牌 替代类型 描述 数据表
2SK2679 TOSHIBA

功能相似

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER

与STP7NB40FP相关器件

型号 品牌 获取价格 描述 数据表
STP7NB60 STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP7NB60_07 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 1.0 ヘ - 7.2A TO-220/TO-220FP
STP7NB60FP STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP7NB80 STMICROELECTRONICS

获取价格

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET
STP7NB80FP STMICROELECTRONICS

获取价格

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET
STP7NC40 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMES
STP7NC70Z STMICROELECTRONICS

获取价格

N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/
STP7NC70ZFP STMICROELECTRONICS

获取价格

N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/
STP7NC80Z STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PA
STP7NC80ZFP STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PA