IRF644NPBF

更新时间： 2024-11-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	276K
描述
HEXFET㈢ Power MOSFET

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数据手册

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IRF644NPBF 数据手册

PD - 94859

IRF644NPbF

IRF644NS

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

IRF644NL

HEXFET^®Power MOSFET

V_DSS= 250V

l Simple Drive Requirements

l Lead-Free (only the TO-220AB

version is currently available in a

R_DS(on)= 240mΩ

lead-free configuration)

Description

I_D= 14A

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

D²Pak

IRF644NS

TO-262

IRF644NL

TO-220AB

IRF644NPbF

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.9

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

180

8.4

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

12/2/03

12 3 4 5 6 7...12

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与IRF644NPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF644NS	VISHAY	获取价格	Power MOSFET
IRF644NS	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
IRF644NSPBF	VISHAY	获取价格	Power MOSFET
IRF644NSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NSTRL	VISHAY	获取价格	Power MOSFET
IRF644NSTRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB
IRF644NSTRLPBF	VISHAY	获取价格	Power MOSFET
IRF644NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NSTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB
IRF644NSTRR	VISHAY	获取价格	Power MOSFET