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IRF644NS

更新时间: 2024-10-31 22:51:35
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 126K
描述
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

IRF644NS 数据手册

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PD - 94107  
IRF644N  
IRF644NS  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Ease of Paralleling  
IRF644NL  
HEXFET® Power MOSFET  
D
VDSS = 250V  
RDS(on) = 240mΩ  
l Simple Drive Requirements  
Description  
G
Fifth Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast switching  
speed and ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
ID = 14A  
S
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipationlevels  
to approximately 50 watts. The low thermal resistance and  
low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
D2Pak  
IRF644NS  
TO-262  
IRF644NL  
TO-220AB  
IRF644N  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to  
2.0W in a typical surface mount application.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
14  
9.9  
A
56  
PD @TC = 25°C  
Power Dissipation  
150  
W
W/°C  
V
Linear Derating Factor  
1.0  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
180†  
8.4  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
15  
mJ  
V/ns  
7.9  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbfin (1.1Nm)  
www.irf.com  
1
3/15/01  

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