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IRF644STRLPBF PDF预览

IRF644STRLPBF

更新时间： 2024-11-27 21:13:15
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 188K
描述
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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IRF644STRLPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMD-220, D2PAK-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：6 weeks
风险等级：5.01其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：550 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：14 A最大漏极电流 (ID)：14 A
最大漏源导通电阻：0.28 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：56 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF644STRLPBF 数据手册

 浏览型号IRF644STRLPBF的Datasheet PDF文件第2页浏览型号IRF644STRLPBF的Datasheet PDF文件第3页浏览型号IRF644STRLPBF的Datasheet PDF文件第4页浏览型号IRF644STRLPBF的Datasheet PDF文件第5页浏览型号IRF644STRLPBF的Datasheet PDF文件第6页浏览型号IRF644STRLPBF的Datasheet PDF文件第7页 
IRF644S, SiHF644S  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
• Surface mount  
• Available in tape and reel  
VDS (V)  
DS(on) ()  
Qg max. (nC)  
250  
• Dynamic dV/dt rating  
R
VGS = 10 V  
0.28  
Available  
Available  
• Repetitive avalanche rated  
• Fast switching  
• Ease of paralleling  
• Simple drive requirements  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
68  
11  
Q
gs (nC)  
gd (nC)  
Q
35  
Configuration  
Single  
Note  
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
D
*
D2PAK (TO-263)  
DESCRIPTION  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
D
G
The D2PAK is a surface mount power package capable of  
accommodating die size up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2.0 W in a typical surface mount application.  
S
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHF644S-GE3  
IRF644SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF644STRL-GE3 a  
IRF644STRLPbF a  
SiHF644STL-E3 a  
SiHF644STRR-GE3 a  
IRF644STRRPbF a  
SiHF644STR-E3 a  
Lead (Pb)-free  
SiHF644S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
250  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
14  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
8.5  
A
Pulsed Drain Current a  
IDM  
56  
Linear Derating Factor  
1.0  
W/°C  
Linear Derating Factor (PCB mount) e  
Single Pulse Avalanche Energy b  
Avalanche Current a  
0.025  
550  
EAS  
IAR  
mJ  
A
14  
Repetitive Avalanche Energy a  
EAR  
13  
mJ  
Maximum Power Dissipation  
T
C = 25 °C  
125  
PD  
W
V/ns  
°C  
Maximum Power Dissipation (PCB mount) e  
Peak Diode Recovery dV/dt c  
TA = 25 °C  
3.1  
dV/dt  
4.8  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak temperature) d  
TJ, Tstg  
-55 to +150  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12).  
c. ISD 14 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
S16-0754-Rev. D, 02-May-16  
Document Number: 91040  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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IRF644STRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF644SPBF VISHAY

完全替代

 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644S VISHAY

完全替代

 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644STRL VISHAY

完全替代

 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met

与IRF644STRLPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF644STRR VISHAY

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 		Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644STRRPBF INFINEON

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 		Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644STRRPBF VISHAY

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 		Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF645 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-220AB
IRF645-001 INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IRF645-001PBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IRF645-002 INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IRF645-002PBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IRF645-003 INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IRF645-003PBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Met

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