IRF644NSTRL

更新时间： 2024-10-31 23:58:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	126K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF644NSTRL 数据手册

PD - 94107

IRF644N

IRF644NS

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

IRF644NL

HEXFET^®Power MOSFET

V_DSS= 250V

R_DS(on)= 240mΩ

l Simple Drive Requirements

Description

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 14A

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

D²Pak

IRF644NS

TO-262

IRF644NL

TO-220AB

IRF644N

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.9

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

180

8.4

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

3/15/01

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRF644NSTRL相关器件

型号	品牌	获取价格	描述	数据表
IRF644NSTRLPBF	VISHAY	获取价格	Power MOSFET
IRF644NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NSTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB
IRF644NSTRR	VISHAY	获取价格	Power MOSFET
IRF644NSTRRPBF	VISHAY	获取价格	Power MOSFET
IRF644NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644PBF	VISHAY	获取价格	Power MOSFET
IRF644S	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644S	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644S, SiHF644S	VISHAY	获取价格	Power MOSFET

与IRF644NSTRL相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF644NSTRL

IRF644NSTRL 数据手册

与IRF644NSTRL相关器件

与IRF644NSTRL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF644NSTRL

IRF644NSTRL 数据手册

与IRF644NSTRL相关器件

与IRF644NSTRL相关文章

您还可以找

您在本页遇到什么问题？