IRF644NSTRR

更新时间： 2024-11-26 23:58:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	126K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB

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中文翻译

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IRF644NSTRR 数据手册

PD - 94107

IRF644N

IRF644NS

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

IRF644NL

HEXFET^®Power MOSFET

V_DSS= 250V

R_DS(on)= 240mΩ

l Simple Drive Requirements

Description

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 14A

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

D²Pak

IRF644NS

TO-262

IRF644NL

TO-220AB

IRF644N

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.9

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

180

8.4

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

3/15/01

12 3 4 5 6 7...11

中文翻译

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与IRF644NSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF644NSTRRPBF	VISHAY	获取价格	Power MOSFET
IRF644NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644PBF	VISHAY	获取价格	Power MOSFET
IRF644S	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644S	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644S, SiHF644S	VISHAY	获取价格	Power MOSFET
IRF644SPBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF644SR	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644STRL	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met

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