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IRF640NSTRLPBF

更新时间： 2024-11-29 12:32:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	341K
描述
Advanced Process Technology

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中文翻译

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数据手册
替代型号

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IRF640NSTRLPBF 数据手册

PD - 95046A

IRF640NPbF

IRF640NSPbF

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

IRF640NLPbF

HEXFET^®Power MOSFET

V_DSS= 200V

l Simple Drive Requirements

R_DS(on)= 0.15Ω

l Lead-Free

Description

I_D= 18A

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

D²Pak

IRF640NSPbF

TO-262

IRF640NLPbF

TO-220AB

IRF640NPbF

The through-hole version (IRF640NL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

247

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

8.1

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

07/23/10

12 3 4 5 6 7...11

中文翻译

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IRF640NSTRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF640NSPBF	INFINEON	完全替代	HEXFET㈢ Power MOSFET
IRFS4020TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRF640NSTRRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Met

与IRF640NSTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF640NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
IRF640PBF	KERSEMI	获取价格	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching
IRF640PBF	VISHAY	获取价格	Power MOSFET
IRF640R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18A I(D) \| TO-220AB
IRF640S	STMICROELECTRONICS	获取价格	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
IRF640S	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640S	NXP	获取价格	N-channel TrenchMOS transistor
IRF640S	VISHAY	获取价格	Power MOSFET
IRF640S	MOTOROLA	获取价格	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640S, SiHF640S, SiHF640L	VISHAY	获取价格	Power MOSFET

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