IRF640S

更新时间： 2024-11-28 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	230K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF640S 数据手册

PD-90902B

IRF640S/L

HEXFET^®Power MOSFET

l Surface Mount (IRF640S)

l Low-profile through-hole (IRF640L)

l Available in Tape & Reel (IRF640S)

l Dynamic dv/dt Rating

l 150°C Operating Temperature

l Fast Switching

V_DSS= 200V

R_DS(on)= 0.18Ω

I_D= 18A

l Fully Avalanche Rated

Description

Third Generation HEXFETsfrom InternationalRectifier provide

the designer with the best combinations of fast switching ,

ruggedized device design, low on-resistance and cost-

effectiveness.

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capabilityand thelowest possibleon-resistance inany

existingsurface mountpackage.TheD²Pak issuitableforhigh

current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.The through-hole version (IRF640L) is

availableforlow-profileapplications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.1

130

1.0

± 20

580

Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.0

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

www.irf.com

7/20/99

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF640S相关器件

型号	品牌	获取价格	描述	数据表
IRF640S, SiHF640S, SiHF640L	VISHAY	获取价格	Power MOSFET
IRF640SPBF	VISHAY	获取价格	Power MOSFET
IRF640ST4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18A I(D) \| TO-263AB
IRF640STRL	VISHAY	获取价格	Power MOSFET
IRF640STRLPBF	VISHAY	获取价格	Power MOSFET
IRF640STRR	VISHAY	获取价格	Power MOSFET
IRF640STRRPBF	VISHAY	获取价格	Power MOSFET
IRF640T	STMICROELECTRONICS	获取价格	N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OV
IRF640T	MOTOROLA	获取价格	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640U2	MOTOROLA	获取价格	18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB