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IRF640STRRPBF

更新时间： 2024-09-16 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	2115K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF640STRRPBF 数据手册

IRF640S, IRF640L, SiHF640S, SiHF640L

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount

PRODUCT SUMMARY

V_DS(V)

200

Available

• Low-Profile Through-Hole

_DS(on)(Ω)

V_GS= 10 V

0.18

RoHS*

• Available in Tape and Reel

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

I²PAK

(TO-262)

D²PAK

(TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combinations of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the last lowest possible on-resistance in

any existing surface mount package. The D²PAK is suitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0 W in a

typical surface mount application. The through-hole version

(IRF640L/SiHF640L) is available for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF640STRRPbF^a

SiHF640STR-E3^a

IRF640STRR^a

I²PAK (TO-262)

IRF640LPbF

SiHF640L-E3

IRF640L

IRF640SPbF

SiHF640S-E3

IRF640S

IRF640STRLPbF^a

SiHF6340STL-E3^a

IRF640STRL^a

Lead (Pb)-free

SnPb

SiHF640S

SiHF640STL^a

SiHF640STR^a

SiHF640L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

1.0

W/°C

E_AS

I_AR

580

Repetiitive Avalanche Energy^a

E_AR

_C= 25 °C

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

130

Peak Diode Recovery dV/dt^{c, e}

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.7 mH, R_G= 25 Ω, I_AS= 18 A (see fig. 12).

c. I_SD≤ 18 A, dI/dt ≤ 150 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF640/SiHF640 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91037

S-81241-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRF640STRRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF640S	VISHAY	完全替代	Power MOSFET
IRF640SPBF	VISHAY	完全替代	Power MOSFET
IRF640STRLPBF	VISHAY	完全替代	Power MOSFET

与IRF640STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF640T	STMICROELECTRONICS	获取价格	N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OV
IRF640T	MOTOROLA	获取价格	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640U2	MOTOROLA	获取价格	18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRF640W	MOTOROLA	获取价格	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRF641	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 18A, 150-200V
IRF641	MOTOROLA	获取价格	18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF641	SAMSUNG	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRF641-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met

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