品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
12页 | 247K | |
描述 | ||
N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OVERLAY⑩ Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF640U2 | MOTOROLA |
获取价格 |
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF640UA | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF640W | MOTOROLA |
获取价格 |
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF640WC | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF641 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 18A, 150-200V | |
IRF641 | MOTOROLA |
获取价格 |
18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF641 | SAMSUNG |
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Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF641-001PBF | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF641-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF641-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |