Datasheet > IRF640T

IRF640T

更新时间： 2024-11-24 04:23:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	247K
描述
N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OVERLAY⑩ Power MOSFET

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IRF640T 数据手册

IRF640T

N-channel 200V - 0.15Ω - 15A - TO-220

MESH OVERLAY™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

IRF640T

200V

<0.16Ω

15A

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitances

TO-220

Description

This Power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

IRF640T

TO-220

Tube

October 2006

Rev 1

1/12

www.st.com

12 3 4 5 6 7...12

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IRF641-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met