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IRF641-013 PDF预览

IRF641-013

更新时间: 2024-11-10 08:22:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF641-013 数据手册

  

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Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
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16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF642-001PBF INFINEON

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16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET
IRF642-002 INFINEON

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Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642-003PBF INFINEON

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Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642-004 INFINEON

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Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met