5秒后页面跳转
IRF642-011 PDF预览

IRF642-011

更新时间: 2024-11-07 05:24:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRF642-011 数据手册

  

与IRF642-011相关器件

型号 品牌 获取价格 描述 数据表
IRF642-011PBF INFINEON

获取价格

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET
IRF642-012 INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642-012PBF INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642-013 INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642-013PBF INFINEON

获取价格

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET
IRF642PBF INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF642R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-220AB
IRF643 FAIRCHILD

获取价格

N-Channel Power MOSFETs, 18A, 150-200V
IRF643-001 INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRF643-002PBF INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met