PD - 94034
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ48
55V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRF5NJZ48
55V
0.016Ω
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
22*
22*
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
88
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.60
±20
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
160
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
3.6
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0
* Current is limited by package
For footnotes refer to the last page
www.irf.com
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11/10/00