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IRF5Y3315CMSCV PDF预览

IRF5Y3315CMSCV

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 106K
描述
150V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV

IRF5Y3315CMSCV 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69雪崩能效等级(Eas):94 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):18 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:S-MSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72 A表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF5Y3315CMSCV 数据手册

 浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第2页浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第3页浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第4页浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第5页浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第6页浏览型号IRF5Y3315CMSCV的Datasheet PDF文件第7页 
PD - 94268  
HEXFET® POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRF5Y3315CM  
150V, N-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5Y3315CM  
150V  
0.08518A*  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
TO-257AA  
Features:  
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
18*  
12  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
72  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
94  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
12  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
6/22/01  

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