生命周期: | Active | 包装说明: | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.69 | 雪崩能效等级(Eas): | 94 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.085 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 72 A | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5Y3315CMSCX | INFINEON |
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150V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX | |
IRF5Y3710CM | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) | |
IRF5Y5305CM | INFINEON |
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POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) | |
IRF5Y5305CMPBF | INFINEON |
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暂无描述 | |
IRF5Y5305CMSCS | INFINEON |
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-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Standard Packaging | |
IRF5Y5305CMSCX | INFINEON |
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-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX | |
IRF5Y540CM | INFINEON |
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POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*) | |
IRF5Y540CM_15 | INFINEON |
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Avalanche Energy Ratings | |
IRF5Y540CMSCX | INFINEON |
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100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX | |
IRF5Y6215CM | INFINEON |
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POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A) |