Datasheet > IRF5800TRPBF

IRF5800TRPBF

更新时间： 2024-02-12 22:49:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	105K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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技术参数
数据手册

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IRF5800TRPBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.68
配置：	Single	最大漏极电流 (Abs) (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	2	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

IRF5800TRPBF 数据手册

PD - 93850A

IRF5800

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

V_DSS= -30V

_DS(on)= 0.085Ω

Top View

Description

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The TSOP-6 package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It'suniquethermaldesignandR_DS(on)reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

TSOP-6

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-30

-4.0

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.2

-32

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

20.6

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

01/13/03

12 3 4 5 6 7 8

中文翻译

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