Datasheet > 晶体管 > 功率场效应晶体管> IRF5806TRPBF

IRF5806TRPBF

更新时间： 2024-09-27 12:05:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	203K
描述
Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF5806TRPBF 数据手册

PD - 95476B

IRF5806PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

l Lead-Free

V_DSS

-20V

R_DS(on)max

86mΩ@V_GS= -4.5V

147mΩ@V_GS= -2.5V

I_D

-4.0A

-3.0A

l Halogen-Free

Description

TheseP-channelMOSFETsfromInternationalRectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefitprovidesthedesignerwithanextremelyefficient

device for use in battery and load management

applications.

The TSOP-6 package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)

60% less than a similar size SOT-23. This package is

idealforapplicationswhereprintedcircuitboardspace

isatapremium. It'suniquethermaldesignandR_DS(on)

reductionenablesacurrent-handlingincreaseofnearly

300% compared to the SOT-23.

Top View

TSOP-6

Absolute Maximum Ratings

Parameter

Max.

-20

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

-4.0

-3.3

-16.5

2.0

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 20

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

04/20/10

12 3 4 5 6 7...9

中文翻译

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