IRF5851PBF

更新时间： 2024-09-27 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
14页	182K
描述
HEXFET㈢ Power MOSFET

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数据手册

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IRF5851PBF 数据手册

PD-95341

IRF5851PbF

HEXFET^®Power MOSFET

N-Ch P-Ch

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

V_DSS20V

-20V

R_DS(on)0.090Ω 0.135Ω

l Lead-Free

Description

TheseNandPchannelMOSFETsfromInternationalRectifierutilizeadvanced

processing techniques to achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an extremely efficient device for

use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit

board space is at a premium and where maximum functionality is required.

With two die per package, the IRF5851 can provide the functionality of two

SOT-23 packages in a smaller footprint. Its unique thermal design and

R_DS(on)reduction enables an increase in current-handling capability.

TSOP-6

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-20

V_DS

Drain-to-Source Voltage

2.7

2.2

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-2.2

-1.7

-9.0

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

0.96

0.62

7.7

Power Dissipation

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

T_J,T_STG

Junction and Storage Temperature Range

°C

-55 to + 150

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

130

°C/W

www.irf.com

08/31/05

12 3 4 5 6 7...14

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