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IRF5M3205UPBF

更新时间： 2025-08-29 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	114K
描述
Power Field-Effect Transistor, 35A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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IRF5M3205UPBF 数据手册

PD - 94292A

HEXFET^®POWER MOSFET

THRU-HOLE (TO-254AA)

IRF5M3205

55V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF5M3205

55V

0.015Ω 35A*

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

TO-254AA

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

140

@ T = 25°C

125

W/°C

Linear Derating Factor

1.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

475

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

2.6

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

9.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

08/28/01

12 3 4 5 6 7

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