Datasheet > IRF5M4905SCVBPBF

IRF5M4905SCVBPBF

更新时间： 2024-09-30 06:32:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	349K
描述
Power Field-Effect Transistor, 35A I(D), 55V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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IRF5M4905SCVBPBF 数据手册

PD-94155A

IRF5M4905

POWER MOSFET

THRU-HOLE (TO-254AA)

55V, P-CHANNEL

HEXFET MOSFET TECHNOLOGY

Product Summary

Part Number

R_DS(on)

I_D

IRF5M4905

-35A*

0.03

TO-254AA

Description

Fifth Generation HEXFET power MOSFETs from IR HiRel

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon unit area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely

efficient device for use in a wide variety of applications.

Features



Low R_DS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high-energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

-35*

I_D@ V_GS= -10V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -10V, T_C= 100°C Continuous Drain Current

-35*

-140

125

1.0

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

490

V_GS

E_AS

I_AR

-35

12.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-2.2

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

* Current is limited by package

For Footnotes refer to the page 2.

2016-06-29

12 3 4 5 6 7

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