Datasheet > 晶体管 > 小信号场效应晶体管> IRF5810TRPBF

IRF5810TRPBF

更新时间： 2024-01-19 03:01:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	204K
描述
Ultra Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF5810TRPBF 数据手册

PD - 95469B

IRF5810PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

l Lead-Free

V_DSS

-20V

R_DS(on)max (mW)

90@V_GS= -4.5V

I_D

-2.9A

135@V_GS= -2.5V

-2.3A

l Halogen-Free

Description

These P-channel HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievetheextremelylowon-resistance

per silicon area. This benefit provides the designer

withanextremelyefficientdeviceforuseinbatteryand

load management applications.

TSOP-6

This Dual TSOP-6 package is ideal for applications

where printed circuit board space is at a premium and

where maximum functionality is required. With two

die per package, the IRF5810 can provide the

functionality of two SOT-23 packages in a smaller

footprint. Its unique thermal design and R_DS(on)

reduction enables an increase in current-handling

capability.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-2.9

-2.3

-11

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

0.96

0.62

Linear Derating Factor

0.008

± 12

mW/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

130

Units

°C/W

R_θJA

www.irf.com

04/20/10

12 3 4 5 6 7...9

中文翻译

下载PDF

IRF5810TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7304TRPBF	INFINEON	功能相似	Generation V Technology

与IRF5810TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF5850	INFINEON	获取价格	Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)
IRF5850TR	INFINEON	获取价格	Ultra Low On-Resistance
IRF5850TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRF5851	INFINEON	获取价格	Power MOSFET(Vdss = +-20 V)
IRF5851PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF5851TR	INFINEON	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel,
IRF5851TRPBF	INFINEON	获取价格	Dual N and P Channel MOSFET
IRF5852	INFINEON	获取价格	Power MOSFET(Vdss=20V)
IRF5852TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRF5D	ETC	获取价格	Analog IC