Datasheet > IRF200B211

IRF200B211

更新时间： 2024-11-25 01:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	551K
描述
Brushed Motor drive applications

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中文翻译

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数据手册

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IRF200B211 数据手册

StrongIRFET™

IRF200B211

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

200V

135m

170m

I_{D (Silicon Limited)}

12A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*RoHS Compliant, Halogen-Free

TO-220AB

IRF200B211

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRF200B211

TO-220

Tube

IRF200B211

500

450

400

350

300

250

200

150

100

= 7.2A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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March 31, 2015

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