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IRF1312S PDF预览

IRF1312S

更新时间: 2024-11-11 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 226K
描述
HEXFET Power MOSFET

IRF1312S 数据手册

 浏览型号IRF1312S的Datasheet PDF文件第2页浏览型号IRF1312S的Datasheet PDF文件第3页浏览型号IRF1312S的Datasheet PDF文件第4页浏览型号IRF1312S的Datasheet PDF文件第5页浏览型号IRF1312S的Datasheet PDF文件第6页浏览型号IRF1312S的Datasheet PDF文件第7页 
PD- 94504  
IRF1312  
IRF1312S  
IRF1312L  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Motor Control  
VDSS  
80V  
RDS(on) max  
ID  
95A†  
10mΩ  
l Uninterrutible Power Supplies  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRF1312S  
TO-262  
IRF1312L  
TO-220AB  
IRF1312  
Absolute Maximum Ratings  
Parameter  
Max.  
95†  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
67†  
380  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ˆ  
3.8  
W
Power Dissipation  
210  
Linear Derating Factor  
1.4  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.1  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
0.73  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface ‡  
Junction-to-Ambient‡  
Junction-to-Ambient (PCB mount)ˆ  
°C/W  
40  
Notes  through ˆ are on page 11  
www.irf.com  
1
7/01/02  

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