IRF1312S

更新时间： 2024-11-11 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	226K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF1312S 数据手册

PD- 94504

IRF1312

IRF1312S

IRF1312L

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Motor Control

V_DSS

80V

R_DS(on)max

I_D

95A

10mΩ

l Uninterrutible Power Supplies

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF1312S

TO-262

IRF1312L

TO-220AB

IRF1312

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

380

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

210

Linear Derating Factor

1.4

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

5.1

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.73

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)

°C/W

Notes through are on page 11

www.irf.com

7/01/02

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRF1312S相关器件

型号	品牌	获取价格	描述	数据表
IRF1312SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312STRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 95A I(D) \| TO-263AB
IRF1312STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF1312STRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 95A I(D) \| TO-263AB
IRF1312STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF131R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 14A I(D) \| TO-204AA
IRF132	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF132	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IRF132	ROCHESTER	获取价格	12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF132	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 20 A, 60-100 V