IRF1324LPBF

更新时间： 2024-11-12 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	522K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF1324LPBF 数据手册

PD - 97353A

IRF1324SPbF

IRF1324LPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

24V

1.3m

1.65m

Ω

max.

l Hard Switched and High Frequency Circuits

I_D

340A

(Silicon Limited)

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRF1324SPbF

TO-262

IRF1324LPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

340

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

240

195

1420

300

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

2.0

Linear Derating Factor

V_GS

dv/dt

T_J

± 20

0.46

Gate-to-Source Voltage

Peak Diode Recovery

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

270

Single Pulse Avalanche Energy

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.50

Units

°C/W

R_θ

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mounted, steady-state)

–––

www.irf.com

09/24/09

12 3 4 5 6 7...10

中文翻译

下载PDF

IRF1324LPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF2804L	INFINEON	类似代替	HEXFET® Power MOSFET

与IRF1324LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF1324PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRF1324S-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1324SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1324STRL-7PP	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Me
IRF132R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-204AA
IRF133	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta
IRF133	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 20 A, 60-100 V
IRF133	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF133	TI	获取价格	IRF133
IRF133	ROCHESTER	获取价格	12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA