IRF1324SPBF

更新时间： 2024-01-11 06:49:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	522K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF1324SPBF 数据手册

PD - 97353A

IRF1324SPbF

IRF1324LPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

24V

1.3m

1.65m

Ω

max.

l Hard Switched and High Frequency Circuits

I_D

340A

(Silicon Limited)

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRF1324SPbF

TO-262

IRF1324LPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

340

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

240

195

1420

300

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

2.0

Linear Derating Factor

V_GS

dv/dt

T_J

± 20

0.46

Gate-to-Source Voltage

Peak Diode Recovery

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

270

Single Pulse Avalanche Energy

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.50

Units

°C/W

R_θ

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mounted, steady-state)

–––

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09/24/09

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IRF1324SPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF1324STRL	INFINEON	完全替代	HEXFETPower MOSFET

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