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IRF1324S-7PPBF PDF预览

IRF1324S-7PPBF

更新时间: 2024-11-05 03:09:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 280K
描述
HEXFET Power MOSFET

IRF1324S-7PPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, D2PAK-7Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
雪崩能效等级(Eas):230 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:24 V
最大漏极电流 (Abs) (ID):429 A最大漏极电流 (ID):240 A
最大漏源导通电阻:0.001 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):1640 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF1324S-7PPBF 数据手册

 浏览型号IRF1324S-7PPBF的Datasheet PDF文件第2页浏览型号IRF1324S-7PPBF的Datasheet PDF文件第3页浏览型号IRF1324S-7PPBF的Datasheet PDF文件第4页浏览型号IRF1324S-7PPBF的Datasheet PDF文件第5页浏览型号IRF1324S-7PPBF的Datasheet PDF文件第6页浏览型号IRF1324S-7PPBF的Datasheet PDF文件第7页 
PD - 97263  
IRF1324S-7PPbF  
HEXFET® Power MOSFET  
D
S
Applications  
VDSS  
RDS(on) typ.  
24V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
0.8m  
1.0m  
:
:
max.  
G
ID  
429A  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
S
S
S
G
D2Pak 7 Pin  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current d  
Max.  
429c  
303c  
1640  
300  
Units  
A
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
2.0  
W/°C  
V
VGS  
± 20  
1.6  
Gate-to-Source Voltage  
Peak Diode Recovery f  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
230  
mJ  
A
Avalanche Currentꢀc  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy g  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case k  
Junction-to-Ambient (PCB Mount) , D Pak  
Typ.  
–––  
Max.  
0.50  
40  
Units  
°C/W  
RθJC  
2
RθJA  
–––  
jk  
www.irf.com  
1
10/10/06  

IRF1324S-7PPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF1324STRL-7PP INFINEON

完全替代

Power Field-Effect Transistor, 160A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Me
AUIRF1324S-7P INFINEON

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