IRF1302

更新时间： 2024-11-08 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	524K
描述
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)

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IRF1302 数据手册

PD - 94591

IRF1302

AUTOMOTIVE MOSFET

HEXFET^®Power MOSFET

Benefits

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 20V

R_DS(on)= 4.0mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 180Aꢀ

Description

Specifically designed for Automotive applications, this Stripe Planar

design of HEXFET^®Power MOSFET utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive avalanche

rating. These benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide variety

of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

180ꢀ

130ꢀ

700

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢁ

P_D@T_C= 25°C

PowerDissipation

230

W/°C

LinearDeratingFactor

1.5

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

Single Pulse Avalanche Energyꢂ

Avalanche Currentꢁ

350

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢃ

Peak Diode Recovery dv/dt ꢄ

Operating Junction and

TBD

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.65

–––

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient (PCB mount)ꢅ

www.irf.com

10/31/02

12 3 4 5 6 7...9

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