IRF1302S

更新时间： 2024-09-23 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	229K
描述
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)

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IRF1302S 数据手册

PD - 94520

AUTOMOTIVE MOSFET

IRF1302S

IRF1302L

Benefits

HEXFET^®Power MOSFET

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 20V

Repetitive Avalanche Allowed up to Tjmax

_DS(on)= 4.0mΩ

I_D= 174A

Description

Specifically designed for Automotive applications, this Stripe Planar

design of HEXFET^®Power MOSFET utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive avalanche

rating. These benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide variety

of other applications.

D²Pak

IRF1302S

TO-262

IRF1302L

Absolute Maximum Ratings

Parameter

Max.

174

120

700

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.4

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

350

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

TBD

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.74

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

–––

www.irf.com

07/16/02

12 3 4 5 6 7...11

中文翻译

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