Datasheet > IRF1302SHR

IRF1302SHR

更新时间： 2024-11-12 21:21:35

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	252K
描述
Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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IRF1302SHR 数据手册

PD - 95407

AUTOMOTIVE MOSFET

IRF1302SPbF

IRF1302LPbF

Benefits

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 20V

_DS(on)= 4.0mΩ

I_D= 174A

Description

Specifically designed for Automotive applications, this Stripe Planar

design of HEXFET^®Power MOSFET utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive avalanche

rating. These benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide variety

of other applications.

D²Pak

IRF1302S

TO-262

IRF1302L

Absolute Maximum Ratings

Parameter

Max.

174

120

700

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.4

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

350

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

TBD

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

–––

www.irf.com

12/22/04

12 3 4 5 6 7...12

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