Datasheet > IRF1310NSTRR

IRF1310NSTRR

更新时间： 2024-09-24 21:22:07

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	166K
描述
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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替代型号

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IRF1310NSTRR 数据手册

PD - 91514B

IRF1310NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF1310NS)

l Low-profilethrough-hole(IRF1310NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS=100V

R_DS(on)= 0.036Ω

l Fully Avalanche Rated

I_D= 42A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRF1310NL)isavailableforlow-

profile applications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

140

3.8

160

1.1

± 20

420

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.95

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

5/13/98

12 3 4 5 6 7...11

中文翻译

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IRF1310NSTRR 替代型号

型号	品牌	替代类型	描述	数据表
IRF1310NSTRRPBF	INFINEON	完全替代	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRF1310NSPBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRF1310NSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF1310NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRF1310S	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
IRF1310STRL	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRF1310STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRF1310STRR	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRF1310STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRF1312	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312L	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312PBF	INFINEON	获取价格	HEXFET Power MOSFET

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