IRF1310N

更新时间： 2024-09-23 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	98K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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数据手册
替代型号

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IRF1310N 数据手册

PD - 91504A

IRF1310N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 100V

_DS(on)= 0.036Ω

l Fully Avalanche Rated

I_D= 42A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

140

160

1.1

± 20

420

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.95

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

5/14/98

12 3 4 5 6 7 8

中文翻译

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IRF1310N 替代型号

型号	品牌	替代类型	描述	数据表
IRF1310NPBF	INFINEON	功能相似	HEXFET POWER MOSFET

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IRF1310NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRF1310NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRF1310NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRF1310S	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)