是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 150 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0062 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 71 W |
最大脉冲漏极电流 (IDM): | 350 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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IPUH6N03LB | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPW50R045CP | INFINEON |
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IPW50R140CP | INFINEON |
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CoolMOSTM Power Transistor | |
IPW50R140CP_08 | INFINEON |
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CoolMOS Power Transistor | |
IPW50R190CE | INFINEON |
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500V CoolMOS⢠CE Power MOSFET | |
IPW50R190CEFKSA1 | INFINEON |
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Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPW50R199CP | INFINEON |
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CoolMOS Power Transistor | |
IPW50R250CP | INFINEON |
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CoolMOSTM Power Transistor Features New revolutionary high voltage technology | |
IPW50R250CPFKSA1 | INFINEON |
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Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IPW50R280CE | INFINEON |
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500V CoolMOS⢠CE Power MOSFET |