Datasheet > IPW50R045CP

IPW50R045CP

更新时间： 2024-01-10 04:01:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	266K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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IPW50R045CP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	62 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	431 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

IPW50R045CP 数据手册

IPW50R045CP

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@T_jmax

R _DS(on),max

Q _g,typ

550

• Worldwide best R_DS,onin TO247

• Lowest figure of merit R_ONx Q_g

0.045

Ω

150 nC

• Ultra low gate charge

• Extreme dv/dt rated

PG-TO247

• High peak current capability

• Pb-free lead plating; RoHS compliant

• Quailfied according to JEDEC¹⁾for target applications

CoolMOS CP is designed for:

• Hard & soft switching SMPS topologies

• CCM PFC

Type

Package

Marking

IPP50R045CP

PG-TO247

5R045P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

170

I _D,pulse

E _AS

I _D=11 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

1920

2.9

2),3)

E _AR

I _AR

11.0

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

static

±30

AC (f>1 Hz)

T _C=25 °C

P _tot

431

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

Mounting torque

°C

M3 and M3.5 screws

page 1

Ncm

Rev. 2.0

2007-11-07

12 3 4 5 6 7...10

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