Datasheet > IPW50R045CP

IPW50R045CP

更新时间： 2024-01-30 08:15:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	266K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IPW50R045CP 技术参数

IPW50R045CP

13 Typ. capacitances

14 Typ. Coss stored energy

C =f(V _DS); V _GS=0 V; f =1 MHz

E _oss= f(V _DS)

10⁵

Ciss

10⁴

10³

Coss

10²

Crss

10¹

10⁰

100

200

300

_DS[V]

400

500

100

200

300

400

500

V _DS[V]

Rev. 2.0

page 7

2007-11-07

1...4 5 678 9 10

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