Datasheet > IPP77N06S309AKSA1

IPP77N06S309AKSA1

更新时间： 2024-11-24 07:04:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	185K
描述
Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

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IPB77N06S3-09

IPI77N06S3-09, IPP77N06S3-09

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

8.8

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB77N06S3-09

IPI77N06S3-09

IPP77N06S3-09

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3N0609

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

Continuous drain current

_GS=10 V²⁾

Pulsed drain current¹⁾

Avalanche energy, single pulse¹⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=38.5 A

160

245

I _AS

Avalanche current, single pulse

Gate source voltage²⁾

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

107

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2007-11-07

12 3 4 5 6 7...9

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