Datasheet > IPP200N25N3G

IPP200N25N3G

更新时间： 2024-11-23 11:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	423K
描述
OptiMOSTM3 Power-Transistor

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中文翻译

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IPP200N25N3G 数据手册

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V _DS

250

• N-channel, normal level

R _DS(on),max

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type

IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

Package

Marking

PG-TO263-3

200N25N

PG-TO220-3

200N25N

PG-TO262-3

200N25N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

256

I _D=47 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

320

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.2

page 1

2009-10-23

12 3 4 5 6 7...11

中文翻译

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IPP200N25N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPB200N25N3G	INFINEON	完全替代	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IXFH60N25Q	IXYS	功能相似	HiPerFET Power MOSFETs Q-Class
IXTT64N25P	IXYS	功能相似	PolarHT Power MOSFET

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