5秒后页面跳转
IPP320N20N3 G PDF预览

IPP320N20N3 G

更新时间: 2024-11-27 11:15:31
品牌 Logo 应用领域
英飞凌 - INFINEON 电机驱动转换器
页数 文件大小 规格书
11页 419K
描述
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术,适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。

IPP320N20N3 G 数据手册

 浏览型号IPP320N20N3 G的Datasheet PDF文件第2页浏览型号IPP320N20N3 G的Datasheet PDF文件第3页浏览型号IPP320N20N3 G的Datasheet PDF文件第4页浏览型号IPP320N20N3 G的Datasheet PDF文件第5页浏览型号IPP320N20N3 G的Datasheet PDF文件第6页浏览型号IPP320N20N3 G的Datasheet PDF文件第7页 
IPB320N20N3 G IPP320N20N3 G  
IPI320N20N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
200  
32  
V
• N-channel, normal level  
R DS(on),max  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
34  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Halogen-free according to IEC61249-2-21  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB320N20N3 G  
IPP320N20N3 G  
IPI320N20N3 G  
Package  
Marking  
PG-TO263-3  
320N20N  
PG-TO220-3  
320N20N  
PG-TO262-3  
320N20N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
34  
22  
A
Pulsed drain current2)  
I D,pulse  
E AS  
136  
190  
I D=34 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
Reverse diode dv /dt  
dv /dt  
10  
kV/µs  
V GS  
Gate source voltage  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.3  
page 1  
2011-05-20  

与IPP320N20N3 G相关器件

型号 品牌 获取价格 描述 数据表
IPP320N20N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features N-channel, normal level
IPP330P10NM INFINEON

获取价格

TO-220 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理
IPP339N20NM6 INFINEON

获取价格

IPP339N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee
IPP35CN10N INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP35CN10NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP35CN10NG_10 INFINEON

获取价格

OptiMOS2 Power-Transistor
IPP35CN10NGXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
IPP410N30N INFINEON

获取价格

OptiMOS™300V MOSFET 采用快速二极管技术,特别针对体二极管硬换向进行了优
IPP45N04S4L-08 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP45N06S3-16 INFINEON

获取价格

OptiMOS-T Power-Transistor