Datasheet > IPF013N04NF2S

IPF013N04NF2S

更新时间： 2023-09-03 20:32:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1051K
描述
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.

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IPF013N04NF2S 数据手册

StrongIRFET^TM2ꢀPower-Transistor

IPF013N04NF2S

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_A=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

232

178

Continuous drain current¹⁾

I_D

V_GS=10ꢀV,ꢀT_A=25ꢀ°C,

R_THJA=40ꢀ°C/W²⁾

Pulsed drain current³⁾

Avalanche energy, single pulse⁴⁾

I_D,pulse

E_AS

928

283

T_A=25ꢀ°C

I_D=100ꢀA,ꢀR_GS=25ꢀΩ

Gate source voltage

V_GS

-20

188

3.8

T_C=25ꢀ°C

Power dissipation

P_tot

T_A=25ꢀ°C,ꢀR_THJA=40ꢀ°C/W²⁾

Operating and storage temperature

T_j,ꢀT_stg

-55

175

°C

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

R_thJA

0.8

°C/W -

Thermal resistance, junction - ambient,

6 cm² cooling area²⁾

Thermal resistance, junction - ambient,

minimal footprint

R_thJA

°C/W -

¹⁾Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See Diagram 3 for more detailed information

⁴⁾See Diagram 13 for more detailed information

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-10-11

1 234 5 6 7...11

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