Datasheet > IPF024N10NF2S

IPF024N10NF2S

更新时间： 2023-09-03 20:36:49

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1155K
描述
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.

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IPF024N10NF2S 数据手册

IPF024N10NF2S

MOSFET

StrongIRFET^TMꢀ2ꢀPower-Transistor

PG-TO263-7

Features

•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications

•ꢀN-Channel,ꢀnormalꢀlevel

tab

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 4, tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

100

2.4

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

mΩ

Source

Pin 2,3,5,6,7

227

131

103

Q_oss

Q_G

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

024N10NS

RelatedꢀLinks

IPF024N10NF2S

PG-TO263-7

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-09-23

12 3 4 5 6 7...11

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