Datasheet > IPF017N08NF2S

IPF017N08NF2S

更新时间： 2024-11-22 11:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1155K
描述
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPF017N08NF2S 数据手册

IPF017N08NF2S

MOSFET

StrongIRFET^TMꢀ2ꢀPower-Transistor

PG-TO263-7

Features

•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications

•ꢀN-Channel,ꢀnormalꢀlevel

tab

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 4, tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

1.7

mΩ

Source

Pin 2,3,5,6,7

259

145

124

Q_oss

Q_G

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

017N08NS

RelatedꢀLinks

IPF017N08NF2S

PG-TO263-7

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-09-23

12 3 4 5 6 7...11

中文翻译

下载PDF

与IPF017N08NF2S相关器件

型号	品牌	获取价格	描述	数据表
IPF019N12NM6	INFINEON	获取价格	This is a normal level 120 V MOSFET in D2PAK-
IPF021N13NM6	INFINEON	获取价格	This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In?D2PAK 7-p
IPF023N08NF2S	INFINEON	获取价格	Infineon's StrongIRFET? 2 power MOSFET 80 V features low RDS(on) of 2.3 mOhm, addressing a
IPF024N10NF2S	INFINEON	获取价格	Infineon's StrongIRFET™ 2 power MOSFET 100 V
IPF031N13NM6	INFINEON	获取价格	This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In?D2PAK 7-p
IPF039N03LG	INFINEON	获取价格	OptiMOS®3 Power-Transistor Features Fast swit
IPF039N08NF2S	INFINEON	获取价格	Infineon's StrongIRFET™ 2 power MOSFET 80 V f
IPF042N10NF2S	INFINEON	获取价格	Infineon's StrongIRFET™ 2 power MOSFET 100 V
IPF04N03LA	INFINEON	获取价格	OptiMOS 2 Power-Transistor
IPF04N03LAG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor