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IPF039N03LG PDF预览

IPF039N03LG

更新时间: 2024-01-10 03:55:24
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
10页 437K
描述
OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS

IPF039N03LG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G3
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):115 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0052 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):350 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPF039N03LG 数据手册

 浏览型号IPF039N03LG的Datasheet PDF文件第2页浏览型号IPF039N03LG的Datasheet PDF文件第3页浏览型号IPF039N03LG的Datasheet PDF文件第4页浏览型号IPF039N03LG的Datasheet PDF文件第5页浏览型号IPF039N03LG的Datasheet PDF文件第6页浏览型号IPF039N03LG的Datasheet PDF文件第7页 
IPF039N03L G  
IPU039N03L G  
OptiMOS®3 Power-Transistor  
Product Summary  
Features  
V DS  
30  
3.9  
50  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
Type  
IPF039N03L G  
IPU039N03L G  
Package  
Marking  
PG-TO252-3-23  
039N03L  
PG-TO251-3-21  
039N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
50  
50  
50  
A
GS=10 V, T C=100 °C  
GS=4.5 V, T C=25 °C  
V
GS=4.5 V,  
50  
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
350  
50  
Avalanche current, single pulse3)  
T C=25 °C  
E AS  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
115  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=175 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 0.9 target datasheet  
page 1  
2006-10-23  

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