是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | SMALL OUTLINE, R-PSSO-G3 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 115 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 350 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPF039N08NF2S | INFINEON |
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Infineon's StrongIRFET™ 2 power MOSFET 80 V f | |
IPF042N10NF2S | INFINEON |
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Infineon's StrongIRFET™ 2 power MOSFET 100 V | |
IPF04N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPF04N03LAG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPF04N03LBG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPF050N03LG | INFINEON |
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Fast switching MOSFET for SMPS Optimized technology for DC/DC converters | |
IPF050N10NF2S | INFINEON |
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Infineon's StrongIRFET? 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a | |
IPF05N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPF05N03LAG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPF05N03LBG | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me |