Datasheet > IPF019N12NM6

IPF019N12NM6

更新时间： 2024-11-19 17:02:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1026K
描述
This is a normal level 120 V MOSFET in D2PAK-7 pin package with 1.9 mOhm on-resistance.? IPF019N12NM6 is part of Infineon’s?OptiMOS? 6 power MOSFET family.

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中文翻译

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数据手册

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IPF019N12NM6 数据手册

IPF019N12NM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ120ꢀV

D²-PAKꢀ7pin

Features

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

tab

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀHighꢀavalancheꢀenergyꢀrating

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitching

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

Drain

Pin 4, tab

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Gate

Pin 1

Source

Pin 2,3,5,6,7

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

120

1.9

Unit

V_DS

R_DS(on),max

mΩ

I_D

254

267

113

336

Q_oss

Q_G

Q_rrꢀ(1000ꢀA/µs)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

019N12N6

RelatedꢀLinks

IPF019N12NM6

PG-TO263-7

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-02-03

12 3 4 5 6 7...11

中文翻译

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