Datasheet > IPF021N13NM6

IPF021N13NM6

更新时间： 2024-09-24 17:15:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1068K
描述
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In?D2PAK 7-pin OptiMOS? 6?135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS? 5?150 V.

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IPF021N13NM6 数据手册

IPF021N13NM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ135ꢀV

PG-TO263-7

Features

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

tab

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀ100%ꢀavalancheꢀtested

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀmotorꢀdrivesꢀandꢀbatteryꢀpoweredꢀapplications

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

Drain

Pin 4, tab

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Gate

Pin 1

Source

Pin 2,3,5,6,7

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

135

2.1

Unit

V_DS

R_DS(on),max

mΩ

I_D

250

275

160

168

Q_oss

Q_G

Q_rrꢀ(500ꢀA/µs)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

021N13N6

RelatedꢀLinks

IPF021N13NM6

PG-TO263-7

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-10-16

12 3 4 5 6 7...11

中文翻译

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