Datasheet > IPD60R1K5PFD7S

IPD60R1K5PFD7S

更新时间： 2024-01-03 09:50:12

品牌	Logo	应用领域
英飞凌 - INFINEON		PC 光电二极管
页数	文件大小	规格书
14页	602K
描述
The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS? 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The?fast body diode and Infineon's industry-leading SMD package?reduce PCB space?and in turn the bill-of-material (BOM) the customer.

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IPD60R1K5PFD7S 数据手册

600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPD60R1K5PFD7S

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

3.6

2.2

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

6.0

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=0.7A; V_DD=50V; see table 10

0.04

0.7

120

I_D=0.7A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

°C

T_C=25°C

Storage temperature

-40

150

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current¹⁾

Diode pulse current²⁾

I_S

3.6

6.0

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=2.5A,ꢀT_j=25°Cꢀꢀꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=2.5A,ꢀT_j=25°Cꢀꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_j,max. Maximum Duty Cycle D = 0.50

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2019-09-27

1 234 5 6 7...14

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