Datasheet > IPD60R1K5PFD7S

IPD60R1K5PFD7S

更新时间： 2024-01-03 09:50:12

品牌	Logo	应用领域
英飞凌 - INFINEON		PC 光电二极管
页数	文件大小	规格书
14页	602K
描述
The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS? 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The?fast body diode and Infineon's industry-leading SMD package?reduce PCB space?and in turn the bill-of-material (BOM) the customer.

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中文翻译

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数据手册

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IPD60R1K5PFD7S 数据手册

600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPD60R1K5PFD7S

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.5

V_DS=V_GS,ꢀI_D=0.04mA

V_DS=600V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600V,ꢀV_GS=0V,ꢀT_j=125°C

Zero gate voltage drain current¹⁾

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

I_GSS

1000 nA

V_GS=20V,ꢀV_DS=0V

1.230 1.500

2.892

V_GS=10V,ꢀI_D=0.7A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=0.7A,ꢀT_j=150°C

R_DS(on)

R_G

Ω

11.0

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

169

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related²⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related³⁾

6.4

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=10V,ꢀI_D=0.7A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=10V,ꢀI_D=0.7A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=10V,ꢀI_D=0.7A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

41.5

V_DD=400V,ꢀV_GS=10V,ꢀI_D=0.7A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

1.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=0.7A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

1.8

Q_g

4.6

Gate plateau voltage

V_plateau

5.6

¹⁾Maximum specification is defined by calculated six sigma upper confidence bound

²⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

³⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2019-09-27

1 2 3 456 7 8...14

中文翻译

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