Datasheet > IPD60N10S4-12

IPD60N10S4-12

更新时间： 2023-12-06 20:13:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	917K
描述
? ? ? 仿真/SPICE 型号

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数据手册

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IPD60N10S4-12 数据手册

IPD60N10S4-12

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics¹⁾

R _thJC

R _thJA

Thermal resistance, junction - case

1.6

K/W

Thermal resistance, junction -

ambient, leaded

SMD version, device on PCB

minimal footprint

6 cm²cooling area²⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0V, I _D=1mA

V _GS(th)V _DS=V _GS, I _D=46µA

Drain-source breakdown voltage

Gate threshold voltage

100

2.0

3.5

2.7

0.01

I _DSS

V _DS=100V, V _GS=0V

Zero gate voltage drain current

µA

V _DS=100V, V _GS=0V,

T _j=125°C²⁾

100

I _GSS

V _GS=20V, V _DS=0V

Gate-source leakage current

100 nA

R _DS(on)V _GS=10V, I _D=60A

Drain-source on-state resistance

10.4

12.2

Rev. 1.1

page 2

2023-01-30

123 4 5 6 7...9

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