Datasheet > IMX8

IMX8

更新时间： 2024-09-25 17:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	378K
描述
120V,0.05A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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IMX8 数据手册

Dual NPN Silicon Epitaxial Planar Transistor

IMX8

Features



Epitaxial planar die construction

Complementary PNP type available (IMT4)

Mechanic al Data



Case: SOT-23-6L

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23-6L

Ordering Information

Part Number

Package

SOT-23-6L

Shipping Quantity

Marking Code

KX8

IMX8

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

Unit

0.05

Thermal Characteristics

Parameter

Power Dissipation ^*1

Symbol

P_D

Value

0.3

Unit

Thermal Resistance Junction-to-Air ^*1

Junction Temperature

R_θJA

T_J

417

°C /W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc.

STM0567A: October 2022 [2.0]

www.gmesemi.com

12 3 4

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